A 33.6-to-46.2GHz 32nm CMOS VCO with 177.5dBc/Hz Minimum Noise FOM Using Inductor Splitting for Tuning Extension

被引:0
|
作者
Mammei, Enrico [1 ]
Monaco, Enrico [2 ]
Mazzanti, Andrea [1 ]
Svelto, Francesco [1 ]
机构
[1] Univ Pavia, I-27100 Pavia, Italy
[2] STMicroelectronics, Pavia, Italy
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:350 / +
页数:3
相关论文
共 5 条
  • [1] A 72μW, 2.4GHz, 11.7% Tuning Range, 212dBc/Hz FoM LC-VCO in 65nm CMOS
    Kim, Joo-Myoung
    Lee, Jae-Seung
    Kim, Suna
    Kim, Taeik
    Park, Hojin
    Lee, Sang-Gug
    2015 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2015,
  • [2] -197dBc/Hz FOM 4.3-GHz VCO Using an Addressable Array of Minimum-Sized NMOS Cross-Coupled Transistor Pairs in 65-nm CMOS
    Jha, A.
    Ahmadi, A.
    Kshattry, S.
    Cao, T.
    Liao, K.
    Yeap, G.
    Makris, Y.
    O, K. K.
    2016 IEEE SYMPOSIUM ON VLSI CIRCUITS (VLSI-CIRCUITS), 2016,
  • [3] A 60GHz 186.5dBc/Hz FoM Quad-Core Fundamental VCO Using Circular Triple-Coupled Transformer with No Mode Ambiguity in 65nm CMOS
    Jia, Haikun
    Deng, Wei
    Guan, Pingda
    Wang, Zhihua
    Chi, Baoyong
    2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2021, 64 : 298 - +
  • [4] A 18.5-to-22.4GHz Class-F23 VCO Achieving 189.1dBc/Hz FoM Without 2nd/3rd-Harmonic Tuning in 65nm CMOS
    Tian, Shuo
    Liu, Xiaolong
    IEEE 49TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE, ESSCIRC 2023, 2023, : 129 - 132
  • [5] A 195 GHz Single-Transistor Fundamental VCO with 15.3 % DC-to-RF Efficiency, 4.5 mW Output Power, Phase Noise FoM of-197 dBc/Hz and 1.1% Tuning Range in a 55 nm SiGe Process
    Khatibi, Hamid
    Khiyabani, Somayeh
    Cathelin, Andreia
    Afshari, Ehsan
    2017 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2017, : 152 - 155