A Transient Liquid Phase Sintering Bonding Process Using Nickel-Tin Mixed Powder for the New Generation of High-Temperature Power Devices

被引:31
|
作者
Feng, Hongliang [1 ]
Huang, Jihua [1 ]
Yang, Jian [1 ]
Zhou, Shaokun [1 ]
Zhang, Rong [1 ]
Chen, Shuhai [1 ]
机构
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, 30 Xueyuan Rd, Beijing 100083, Peoples R China
关键词
Bonding; TLPS; high temperature; IMC; SN; JOINTS; AG;
D O I
10.1007/s11664-017-5357-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A transient liquid phase sintering (TLPS) bonding process, Ni-Sn TLPS bonding was developed for the new generation of power semiconductor packaging. A model Ni/Ni-Sn/Ni sandwiched structure was assembled by using 30Ni-70Sn mixed powder as the reactive system. The results show that the bonding layer is composed of Ni3Sn4 and residual fine Ni particles with a small amount of Ni3Sn2 at 340A degrees C for 240 min, which has a heat-resistant temperature higher than 790A degrees C. The microstructural evolution and thermal characteristic of the bonding layer for various times at 300A degrees C and 340A degrees C were also studied, respectively. This reveals that, after isothermally holding for 240 min at 300A degrees C and for 180 min at 340A degrees C, Sn has been completely transformed into Ni-Sn intermetallic compounds (IMCs) and the bonding layer is mainly composed of Ni3Sn4 and residual Ni particles. The analysis result for the mechanical properties of the joint shows that the hardness of the bonding layer at 340A degrees C for 240 min is uniform and that the average value reaches 3.66 GPa, which is close to that of the Ni3Sn4 block material. The shear test shows that, as the holding time increases from 60 min to 180 min at 340A degrees C, because of the existence of Sn, the disparity of shear strength between room temperature and 350A degrees C is large. But when the holding time is 180 min or longer, Sn has been completely transformed into Ni-Sn IMCs. Their performances are very similar whether at room temperature or 350A degrees C.
引用
收藏
页码:4152 / 4159
页数:8
相关论文
共 50 条
  • [1] A Transient Liquid Phase Sintering Bonding Process Using Nickel-Tin Mixed Powder for the New Generation of High-Temperature Power Devices
    Hongliang Feng
    Jihua Huang
    Jian Yang
    Shaokun Zhou
    Rong Zhang
    Shuhai Chen
    Journal of Electronic Materials, 2017, 46 : 4152 - 4159
  • [2] Nickel-tin transient liquid phase sintering with high bonding strength for high-temperature power applications
    Yoon, Jeong-Won
    Kim, Young-Se
    Jeong, So-Eun
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (22) : 20205 - 20212
  • [3] Nickel–tin transient liquid phase sintering with high bonding strength for high-temperature power applications
    Jeong-Won Yoon
    Young-Se Kim
    So-Eun Jeong
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 20205 - 20212
  • [4] Nickel-Tin Transient Liquid Phase Bonding Toward High-Temperature Operational Power Electronics in Electrified Vehicles
    Yoon, Sang Won
    Glover, Michael D.
    Shiozaki, Koji
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2013, 28 (05) : 2448 - 2456
  • [5] Highly Reliable Nickel-Tin Transient Liquid Phase Bonding Technology for High Temperature Operational Power Electronics in Electrified Vehicles
    Yoon, Sang Won
    Shiozaki, Koji
    Yasuda, Satoshi
    Glover, Michael D.
    2012 TWENTY-SEVENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2012, : 478 - 482
  • [6] High temperature investigation on a nickel-tin transient liquid-phase wafer bonding up to 600 C
    Budhiman, Nando
    Jensen, Bjoern
    Chemnitz, Steffen
    Wagner, Bernhard
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2017, 23 (03): : 745 - 754
  • [7] High Temperature Resistant Ni-Sn Transient Liquid Phase Sintering Bonding for New Generation Semiconductor Power Electronic Devices
    Feng, Hongliang
    Huang, Jihua
    Zhang, Jie
    Zhai, Xiaodong
    Zhao, Xingke
    Chen, Shuhai
    2015 IEEE 17TH ELECTRONICS PACKAGING AND TECHNOLOGY CONFERENCE (EPTC), 2015,
  • [8] Nickel-tin transient liquid phase (TLP) wafer bonding for MEMS vacuum packaging
    Welch, W. C., III
    Najafi, K.
    TRANSDUCERS '07 & EUROSENSORS XXI, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2007,
  • [9] High Temperature Resistant Joint Technology for SiC Power Devices Using Transient Liquid Phase Sintering Process
    Lang, Fengqun
    Yamaguchi, Hiroshi
    Nakagawa, Hiroshi
    Sato, Hiroshi
    2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012), 2012, : 157 - 161
  • [10] Transient liquid-phase sintering using silver and tin powder mixture for die bonding
    Fujino, Masahisa
    Narusawa, Hirozumi
    Kuramochi, Yuzuru
    Higurashi, Eiji
    Suga, Tadatomo
    Shiratori, Toshiyuki
    Mizukoshi, Masataka
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)