We report experimental results on an insulator-on-metal system which is inherently unstable against lateral pattern formation on the nanometer scale. NaCl deposition on Cu(211) at substrate temperatures >300 K leads to faceting into (311) and (111) facets and selective NaCl growth on (311) facets only, thereby creating alternating stripes of bare Cu and NaCl-covered areas. The mesoscopic restructuring process is brought about by (1) the tendency to form (100)-terminated NaCl layers, (2) epitaxial matching between NaCl(100) and Cu(311), and (3) sufficient mobility of the Cu substrate surface.
机构:
St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
Peter Great State Polytech Univ, St Petersburg 195251, Russia
Univ Eastern Finland, POB 111, Joensuu 80101, FinlandSt Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
Reduto, I. V.
Chervinskii, S. D.
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Peter Great State Polytech Univ, St Petersburg 195251, Russia
Univ Eastern Finland, POB 111, Joensuu 80101, FinlandSt Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
Chervinskii, S. D.
Kamenskii, A. N.
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Peter Great State Polytech Univ, St Petersburg 195251, RussiaSt Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
Kamenskii, A. N.
Karpov, D. V.
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St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
Univ Eastern Finland, POB 111, Joensuu 80101, FinlandSt Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
Karpov, D. V.
Lipovskii, A. A.
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St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
Peter Great State Polytech Univ, St Petersburg 195251, RussiaSt Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
机构:
UJF Grenoble 1, UMR E CEA, INAC, Equipe Mixte CEA,CNRS,UJF Nanophys & Semicond,SP2, F-38054 Grenoble, FranceUJF Grenoble 1, UMR E CEA, INAC, Equipe Mixte CEA,CNRS,UJF Nanophys & Semicond,SP2, F-38054 Grenoble, France
Eymery, Joel
Chen, Xiaojun
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UJF Grenoble 1, UMR E CEA, INAC, Equipe Mixte CEA,CNRS,UJF Nanophys & Semicond,SP2, F-38054 Grenoble, FranceUJF Grenoble 1, UMR E CEA, INAC, Equipe Mixte CEA,CNRS,UJF Nanophys & Semicond,SP2, F-38054 Grenoble, France
Chen, Xiaojun
Durand, Christophe
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UJF Grenoble 1, UMR E CEA, INAC, Equipe Mixte CEA,CNRS,UJF Nanophys & Semicond,SP2, F-38054 Grenoble, FranceUJF Grenoble 1, UMR E CEA, INAC, Equipe Mixte CEA,CNRS,UJF Nanophys & Semicond,SP2, F-38054 Grenoble, France
Durand, Christophe
Kolb, Matthias
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Max Planck Inst Intelligent Syst, D-70569 Stuttgart, GermanyUJF Grenoble 1, UMR E CEA, INAC, Equipe Mixte CEA,CNRS,UJF Nanophys & Semicond,SP2, F-38054 Grenoble, France
Kolb, Matthias
Richter, Gunther
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Max Planck Inst Intelligent Syst, D-70569 Stuttgart, GermanyUJF Grenoble 1, UMR E CEA, INAC, Equipe Mixte CEA,CNRS,UJF Nanophys & Semicond,SP2, F-38054 Grenoble, France