Ge1-xSnx Alloys Pseudomorphically Grown on Ge (001) by Sputtering

被引：0
|
作者：
Ladron de Guevara, H. Perez [1 ]
RodriGuez, A. G. [2 ]
Navarro-Contreras, H. [2 ]
Vidal, M. A. [2 ]
机构：
[1] Univ Guadalajara, Ctr Univ Lagos, Av Enrique Diaz de Leon 1144, Lagos De Moreno 47460, Jalisco, Mexico
[2] UASLP, CIACYT, San Luis Potosi 78000, Mexico
来源：
SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期
关键词：
SUBSTRATE; FILMS;
D O I：
10.1149/05009.0413ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Ge1-xSnx alloys were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. sputtering system with two independents plasmas not simultaneous focus to substrate. We determined the in-plane and in-growth lattice parameters, as well as the alloy bulk lattice parameter of the alloys for different Sn concentrations by high resolution x-ray diffraction. At low concentrations, we observed that Ge1-xSnx layers have pseudomorphic characteristics. We also determine the band gap of these alloys from transmittance measurements at different temperatures, using a fast-Fourier-transform infrared interferometer. Our results show that the change from indirect to direct band gap it is observed to lie between 0.10< x(c) < 0.13.
引用
收藏
页码：413 / 417
页数：5
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