A ±5A Battery Current Sensor with ±0.04% Gain Error from-55°C to+125°C

被引：0

作者：

Shalmany, Saleh Heidary ^{[1
]}

Makinwa, Kofi ^{[1
]}

Draxelmayr, Dieter ^{[2
]}

机构：

[1] Delft Univ Technol, Elect Instrumentat Lab, DIMES, Delft, Netherlands

[2] Infineon Technol, Villach, Austria

来源：

2013 5TH IEEE INTERNATIONAL WORKSHOP ON ADVANCES IN SENSORS AND INTERFACES (IWASI) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a battery current sensor (CS) that consists of a calibrated 10m Omega shunt resistor, and a chip comprising a switched-capacitor (SC) Delta Sigma ADC and a bandgap reference (BGR). The chip was realized in a standard 0.13 mu m CMOS process, occupies 1.15mm(2) and draws 55 mu A from a 1.5V supply. With an off-chip shunt it can digitize bi-directional currents ranging from -5A to +5A with 150 mu A offset and +/- 0.04% gain error over the military temperature range (-55 degrees C to +125 degrees C). This performance is achieved by using room temperature trimming, dynamic error correction techniques, a dynamic BGR and a low-leakage sensor front-end.

引用

页码：117 / 120

页数：4

共 43 条

[1] A NEW ARCHITECTURE TEMPERATURE SENSOR WITH 0.03°C RESOLUTION FROM-55°C TO 125°C
Xu, Dongyuan
Zhao, Meng
Lu, Wengao
Chu, Hai
Zhang, Yacong
Chen, Zhongjian
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[2] A ±5 A Integrated Current-Sensing System With ±0.3% Gain Error and 16 μA Offset From-55 °C to+85 °C
Shalmany, Saleh Heidary
Draxelmayr, Dieter
Makinwa, Kofi A. A.
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (04) : 800 - 808
[3] A 13-bit Temperature Sensor With a ±1.45°C (3σ) Inaccuracy From-55°C to 125°C
Fan, Hua
Wu, Bowen
Che, Hongrui
Yu, Ruoyu
Wang, Hongquan
Wang, Haizhu
Wang, Ce
Aprile, Antonio
Bonizzoni, Edoardo
Wang, Haishi
Feng, Quanyuan
Wei, Qi
IEEE SENSORS JOURNAL, 2024, 24 (20) : 33011 - 33021
[4] SLD-based light-emitting modules at 1300 nm operable in temperature range from-55°C to+125°C
Ilchenko, S. N.
Kostin, Yu. O.
Yakubovich, S. D.
2014 INTERNATIONAL CONFERENCE LASER OPTICS, 2014,
[5] Electro-Thermo-Mechanical Analysis of a BiCMOS Embedded RF-MEMS Switch for Temperatures from-55°C to+125°C
Wietstruck, M.
Kaynak, M.
Zhang, W.
Tillack, B.
2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2013, : 18 - 20
[6] A BJT-Based Temperature Sensor with a Packaging-Robust Inaccuracy of ±0.3°C (3σ) from-55°C to+125°C After Heater-Assisted Voltage Calibration
Yousefzadeh, Bahman
Makinwa, Kofi A. A.
2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC), 2017, : 162 - 162
[7] A ±36A Integrated Current-Sensing System with 0.3% Gain Error and 400μA Offset from-55°C to+85°C
Shalmany, Saleh Heidary
Draxelmayr, Dieter
Makinwa, Kofi
2016 IEEE SYMPOSIUM ON VLSI CIRCUITS (VLSI-CIRCUITS), 2016,
[8] A sub-1V BJT-based CMOS temperature sensor from-55 °C to 125 °C
Wang, Bo
Law, Man Kay
Tang, Fang
Bermak, Amine
2012 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS 2012), 2012,
[9] A ±36-A Integrated Current-Sensing System With a 0.3% Gain Error and a 400-μA Offset From-55 °C to+85 °C
Shalmany, Saleh Heidary
Draxelmayr, Dieter
Makinwa, Kofi A. A.
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2017, 52 (04) : 1034 - 1043
[10] A 0.25 mm2-Resistor-Based Temperature Sensor With an Inaccuracy of 0.12 °C (3σ) From-55 °C to 125 °C
Pan, Sining
Makinwa, Kofi A. A.
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2018, 53 (12) : 3347 - 3355

← 1 2 3 4 5 →