Influence of the Carbon Content on the Crystallization and Oxidation Behavior of Polymer-Derived Silicon Carbide (SiC)

被引：13
|
作者：
Lehmann, Tobias [1 ]
Baier, Johannes [1 ]
Leineweber, Andreas [2 ]
Kienzle, Andreas [3 ]
Bill, Joachim [1 ]
机构：
[1] Univ Stuttgart, Inst Mat Sci, D-70569 Stuttgart, Germany
[2] Max Planck Inst Intelligent Syst, D-70569 Stuttgart, Germany
[3] SGL Carbon GmbH, D-86405 Meitingen, Germany
来源：
ADVANCED ENGINEERING MATERIALS | 2015年 / 17卷 / 11期
关键词：
C-N CERAMICS; SELF-DIFFUSION; PRECURSOR; FIBER; POLYCARBOSILANE; TEMPERATURE; SYSTEMS; AIR;
D O I：
10.1002/adem.201500064
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon Carbide (SiC) samples with controlled carbon contents are manufactured from polymeric precursors. Based on X-ray diffraction (XRD) data, a correlation of the excess carbon content and the crystallization kinetics of silicon carbide are determined for the obtained pyrolysates. The crystallization mechanisms as well as the corresponding activation energies E-A are also determined. Furthermore, the influence of the carbon content on the oxidation behavior of these pyrolysates is studied. A model for the oxidation of the prepared silicon carbide-based materials is proposed.
引用
收藏
页码：1631 / 1638
页数：8
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