Correlated optical and structural analyses of individual GaAsP/GaP core-shell nanowires

被引：7
|
作者：
Himwas, C. [1 ,2 ]
Collin, S. [1 ]
Chen, H-L [1 ]
Patriarche, G. [1 ]
Oehler, F. [1 ]
Travers, L. [1 ]
Saket, O. [1 ]
Julien, F. H. [1 ]
Harmand, J-C [1 ]
Tchernycheva, M. [1 ]
机构：
[1] Univ Paris Saclay, Ctr Nanosci & Nanotechnol, UMR CNRS 9001, Univ Paris Sud, 10 Blvd Thomas Gobert, F-91120 Palaiseau, France
[2] Chulalongkorn Univ, Fac Engn, Dept Elect Engn, Semicond Device Res Lab, 254 Phayathai Rd, Bangkok 10330, Thailand
来源：
NANOTECHNOLOGY | 2019年 / 30卷 / 30期
基金：
欧洲研究理事会;
关键词：
nanowire; GaAsP/GaP core-shell; molecular beam epitaxy; cathodoluminescence; SOLAR-CELLS; SURFACE PASSIVATION; EFFICIENCY; ABSORPTION; IMPACT; GROWTH; GA;
D O I：
10.1088/1361-6528/ab1760
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the structural and optical properties of GaAs0.7P0.3/GaP core-shell nanowires (NWs) for future photovoltaic applications. The NWs are grown by self-catalyzed molecular beam epitaxy. Scanning transmission electron microscopy (STEM) analyses demonstrate that the GaAsP NW core develops an inverse-tapered shape with a formation of an unintentional GaAsP shell having a lower P content. Without surface passivation, this unintentional shell produces no luminescence because of strong surface recombination. However, passivation of the surface with a GaP shell leads to the appearance of a secondary peak in the luminescence spectrum arising from this unintentional shell. The attribution of the luminescence peaks is confirmed by correlated cathodoluminescence and STEM analyses of the same NW.
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页数：10
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