Towards a Ge-based Laser for CMOS Applications

被引：21
|
作者：
Liu, Jifeng [1 ]
Sun, Xiaochen [1 ]
Becla, Piotr [1 ]
Kimerling, Lionel C. [1 ]
Michel, Jurgen [1 ]
机构：
[1] MIT, Microphoton Ctr, Cambridge, MA 02139 USA
来源：
2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2008年
关键词：
D O I：
10.1109/GROUP4.2008.4638081
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report experimental observation of direct band gap photoluminescence (PL) and optical bleaching of band-engineered epitaxial Ge-on-Si at room temperature, confirming that this material is a promising candidate for efficient light emitting devices on Si.
引用
收藏
页码：16 / 18
页数：3
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