A Chemically Amplified Molecular Glass Resist with an Ionic Photoacid Generator and a Single Protection Group

被引:2
|
作者
Kasai, Tatsuaki [1 ]
Higashihara, Tomoya [1 ]
Ueda, Mitsuru [1 ]
机构
[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Organ & Polymer Mat, Meguro Ku, Tokyo 1528552, Japan
关键词
photochemistry; irradiation; properties and characterization;
D O I
10.1002/app.39769
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
A molecular glass resist with an ionic photoacid generator and a single protection group (MR-1) has been developed. MR-1 exhibited good thermal properties, such as a 5% weight loss temperature (T-d5%) of 167 degrees C and a glass transition temperature (T-g) of 80 degrees C. MR-1 showed the good sensitivity of 80 mu C/cm(2) and high contrast of 4.9 with e-beam exposure (50 keV). A relatively high resolution of 50 nm and low Line-Edge-Roughness of 3.8 nm were obtained by e-beam exposure (100 keV). (C) 2013 Wiley Periodicals, Inc.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Photoacid generator study for a chemically-amplified negative resist for high resolution lithography
    Dentinger, PM
    Knapp, KG
    Reynolds, GW
    Taylor, JW
    Fedynyshyn, TH
    Richardson, TA
    EMERGING LITHOGRAPHIC TECHNOLOGIES II, 1998, 3331 : 568 - 579
  • [2] Monitoring photoacid generation in chemically amplified resist systems
    Okoroanyanwu, U
    Byers, JD
    Cao, T
    Webber, SE
    Willson, CG
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2, 1998, 3333 : 747 - 757
  • [3] Non-ionic photoacid generators for chemically amplified photoresists: Structure effect on resist performance
    Yamato, Hitoshi
    Asakura, Toshikage
    Ohwa, Masaki
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXIII, PTS 1 AND 2, 2006, 6153 : U255 - U263
  • [4] Non-ionic photoacid generators for chemically amplified resists: Chromophore effect on resist performance
    Nishimae, Yuichi
    Yamato, Hitoshi
    Asakura, Toshikage
    Ohwa, Masaki
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923
  • [5] Extended model for chemically amplified resist with multiple photoacid generators
    Yao, Delong
    Dong, Lisong
    Hao, Yunyun
    Wei, Yayi
    Fang, Ming
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2025, 43 (02):
  • [6] Novel non-ionic photoacid generator releasing strong acid for chemically amplified resists
    Yamato, H
    Asakura, T
    Hintermann, T
    Ohwa, M
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 103 - 114
  • [7] A novel photoacid generator for chemically amplified resists with ArF exposure
    Asakura, T
    Yamato, H
    Matsumoto, A
    Murer, P
    Ohwa, M
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 1155 - 1163
  • [8] Chemically amplified resist for ArF excimer laser lithography composed of an alkylsulfonium salt photoacid generator and an alicyclic terpolymer
    Nakano, K
    Ohfuji, T
    Maeda, K
    Iwasa, S
    Hasegawa, E
    KOBUNSHI RONBUNSHU, 1996, 53 (04) : 239 - 247
  • [9] Effect of photoacid generator concentration on sensitivity, photoacid generation, and deprotection of chemically amplified resists
    Pawloski, AR
    Nealey, PF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (06): : 2413 - 2420
  • [10] Effects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performance
    Lee, Cheng-Tsung
    Henderson, Clifford L.
    Wang, Mingxing
    Gonsalves, Kenneth E.
    Yueh, Wang
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (06): : 2136 - 2139