A reduced-size silicon micromachined high-Q resonator at 5.7 GHz

被引:18
|
作者
Tavernier, CA [1 ]
Henderson, RM
Papapolymerou, J
机构
[1] Univ Arizona, Dept Elect & Comp Engn, Tucson, AZ 85721 USA
[2] Semicond Prod Sector, DigitalDNA Labs, Tempe, AZ 85284 USA
[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
关键词
high-Q resonators; micromachining; planar circuit; small size;
D O I
10.1109/TMTT.2002.803428
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper depicts the progress toward a novel high-quality-factor miniaturized resonator operating in the 5.6-5.8-GHz range. The design of the resonator is based on a micromachined cavity loaded with a high dielectric-constant material. Energy is coupled into the cavity from input and output microstrip lines via slots. Quality factors up to 640 are demonstrated on silicon planar structures with a volume of 177 mm(3). Further size reduction yields a volume of 24.5 mm(3) and quality factors ranging from 152 to 197, while keeping the resonator integration ability. Bonding techniques and the dielectric loss of the loading material are proven to be the limiting factors in achieving higher quality factors.
引用
收藏
页码:2305 / 2314
页数:10
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