Photoluminescent properties of nc-Si/SiOx nanosystems

被引：1
|
作者：
Olenych, Igor B. [1 ]
Monastyrskii, Liubomyr S. [1 ]
Boyko, Yaroslav V. [1 ]
Luchechko, Andriy P. [1 ]
Kostruba, Andriy M. [2 ]
机构：
[1] Ivan Franko Natl Univ Lviv, Elect & Comp Technol Dept, 50 Dragomanov St, UA-79005 Lvov, Ukraine
[2] Lviv Univ Trade & Econ, 9 Samtshuka St, UA-79011 Lvov, Ukraine
来源：
APPLIED NANOSCIENCE | 2019年 / 9卷 / 05期
关键词：
Silicon nanocrystal; Silicon oxide; Nanosystem; Irradiation; Ellipsometry; Photoluminescence; SI NANOCRYSTALS; ION-IMPLANTATION; EMISSION; LUMINESCENCE; POLYMER;
D O I：
10.1007/s13204-018-0701-4
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work the nc-Si/SiOx nanosystems were obtained on the silicon substrate by means of evaporation of silicon powder in an oxidizing atmosphere. Then deposited SiOx films were irradiated from Ra-226 isotope and were annealed at 1000 degrees C to grow nc-Si. By means of the ellipsometric technique we studied the effect of annealing duration and irradiation on the optical characteristics of nc-Si/SiOx films. It was found that irradiation of obtained films promotes visible photoluminescence witdh maximum near 740nm. More effective photon emission is caused by the change of nc-Si passivation conditions. Obtained experimental and theoretical results show the important influence of the Si/SiOx interface on the light emitting properties of nc-Si.
引用
收藏
页码：781 / 786
页数：6
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