Rectifying characteristics and solar-blind photoresponse in β-Ga2O3/ZnO heterojunctions

被引：8
|
作者：
Ma, Xiao-Fei [1 ,2 ]
Huang, Yuan-Qi [1 ,2 ]
Zhi, Yu-Song [1 ,2 ]
Li, Pei-Gang [1 ,2 ]
Wu, Zhen-Ping [1 ,2 ]
Tang, Wei-Hua [1 ,2 ]
机构：
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China
来源：
CHINESE PHYSICS B | 2019年 / 28卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Ga2O3; solar blind photodetector; heterojunction; self-powered; ULTRAVIOLET PHOTODETECTOR; THIN-FILMS; PHOTODIODES; PERFORMANCE; FABRICATION; GRAPHENE;
D O I：
10.1088/1674-1056/28/8/088503
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Heterojunctions composed of beta-Ga2O3 and ZnO films are fabricated on sapphire substrates by using the laser molecular beam epitaxy method. The heterojunction possesses excellent rectifying characteristics with an asymmetry ratio over 10(5). Prominent solar-blind photoresponse effect is also observed in the formed heterojunction. The photodetector exhibits a self-powered behavior with a fast response speed (rise time and decay time are 0.035 s and 0.032 s respectively) at zero bias. The obtained high performance can be related to the built-in field driven photogenerated electron-hole separation.
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页数：5
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