Yellow-green ZnCdSe/BeZnTe II-VI laser diodes grown on InP substrates

被引：35
|
作者：
Che, SB [1 ]
Nomura, I [1 ]
Kikuchi, A [1 ]
Kishino, K [1 ]
机构：
[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 06期
关键词：
D O I：
10.1063/1.1492311
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Yellow-green (560 nm) II-VI laser diodes on InP substrates were successfully operated under the pulsed current injection at 77 K. A separate confinement heterostructure was formed by employing MgSe/BeZnTe:N superlattices (SL) as p-cladding layers and MgSe/ZnCdSe:Cl SL as n-cladding layers. The threshold current density was about 2.5 kA/cm(2). (C) 2002 American Institute of Physics.
引用
收藏
页码：972 / 974
页数：3
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