Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics

被引：4

作者：

Zhou, Shuang ^{[1
]}

Su, Yaorong ^{[1
]}

Xiao, Yubin ^{[1
]}

Zhao, Ni ^{[1
]}

Xu, Jianbin ^{[1
]}

Wong, Chingping ^{[1
]}

机构：

[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China

来源：

NANOTECHNOLOGY | 2014年 / 25卷 / 26期

基金：

美国国家科学基金会;

关键词：

GFETs; ODPA/ATO; high-k; low-voltage; mobility; LARGE-AREA GRAPHENE; THIN-FILM TRANSISTORS; HIGH-QUALITY; MONOLAYER GRAPHENE; RAMAN-SPECTROSCOPY; PERFORMANCE; OXIDE; TRANSPORT; DEVICES; GROWTH;

D O I：

10.1088/0957-4484/25/26/265201

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, a solution-processed bilayer high-k dielectric (Al2Oy/TiOx, abbrev. as ATO) was used to realize the low-voltage operation of graphene field-effect transistors (GFETs), in which the graphene was grown by atmospheric pressure chemical vapor deposition (APCVD). Upon modifying the interface between graphene and the dielectric by octadecylphosphonic acid (ODPA), outstanding room-temperature hole mobility up to 5805 cm(2) V-1 s(-1) and electron mobility of 3232 cm(2) V-1 s(-1) were obtained in a small gate voltage range from -3.0 V to 3.0 V under a vacuum. Meanwhile, an excellent on/off current ratio of about 8 was achieved. Our studies demonstrate an effective route in which utilizing the low-temperature solution-processed dielectrics can achieve low-voltage and high performance GFETs.

引用

页数：9

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