Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics

被引：11
|
作者：
Yang, Xiangyu [1 ]
Lee, Bongmook [1 ]
Misra, Veena [1 ]
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 11期
关键词：
Atomic layer deposition (ALD); ALD SiO2; lanthanum silicate (LaSiOx); mobility; silicon carbide (SiC); MOBILITY;
D O I：
10.1109/TED.2015.2480047
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The lanthanum silicate interface engineering has been shown to dramatically improve the mobility of 4H-silicon carbide (SiC) MOSFETs. We studied the impact of post deposition annealing (PDA) conditions and the initial lanthanum oxide (La2O3) thickness on the MOSFET performance. The combination of 900 degrees C PDA and 1 nm La2O3 leads to highest field-effect mobility. Higher PDA temperature leads to mobility reduction due to lower lanthanum concentration at the SiC/dielectric interface. The peak mobility and threshold voltage show strong dependence on the initial La2O3 thickness.
引用
收藏
页码：3781 / 3785
页数：5
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