Electrodeposition of CuInSe2 thin films

The electrochemical route of CuInSe2 formation in direct electrodeposition process from the bath containing water solutions CuSO4, In-2(SO4)(3) and SeO2 is studied and the optimal conditions for preparation of films with predetermined chemical composition are found. It is shown, that in the case of solutions where Se/Cu (alpha) > 2 the formation of CuInSe2 proceeds through the decomposition of copper selenides providing Se-2 into the solution which enables the production of In2Se3. The value of ratio of indium and copper concentrations (In/Cu) in films clectrodeposited at the potential area from -0.2 to -0.5 V (vs. SCE) is independent oil the copper concentration in the solution and increases with the deposition potential. At the same time the concentration of In in films is determined both by the deposition potential and the copper concentration in the solution.