Micromagnetoluminescence on ferromagnet-semiconductor hybrid nanostructures

被引:7
|
作者
Schömig, H
Halm, S
Bacher, G
Forchel, A
Kipferl, W
Back, CH
Puls, J
Henneberger, F
机构
[1] Univ Duisburg Essen, D-47057 Duisburg, Germany
[2] Univ Wurzburg, D-97074 Wurzburg, Germany
[3] Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany
[4] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany
关键词
D O I
10.1063/1.1652392
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a magneto-optical approach for probing the optical response of a diluted magnetic semiconductor to the fringe field of nanostructured ferromagnets with sub-mum spatial resolution. Scanning across a CdZnMnSe/ZnSe quantum well covered by a single 700 nm wide dysprosium (Dy) wire a redshift of the magnetoluminescence signal is found beneath the ferromagnetic stripe. This on one hand demonstrates the strength of our experimental technique and on the other hand gives an indication of a local band gap modulation due to the giant Zeeman effect caused by the fringe field of ferromagnetic nanostructures. (C) 2004 American Institute of Physics.
引用
收藏
页码:7411 / 7413
页数:3
相关论文
共 50 条
  • [1] Micromagnetoluminescence on ferromagnet-semiconductor hybrid nanostructures
    Bacher, G. (g.bacher@uni-duisburg.de), 1600, American Institute of Physics Inc. (95):
  • [2] Orientation of electron spins in hybrid ferromagnet-semiconductor nanostructures
    Akimov, I. A.
    Korenev, V. L.
    Sapega, V. F.
    Langer, L.
    Zaitsev, S. V.
    Danilov, Yu A.
    Yakovlev, D. R.
    Bayer, M.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2014, 251 (09): : 1663 - 1672
  • [3] Hybrid ferromagnet-semiconductor devices
    Johnson, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1806 - 1811
  • [4] Hybrid ferromagnet-semiconductor nonvolatile gate
    Johnson, Mark
    Bennett, Brian R.
    Yang, M.J.
    Miller, M.M.
    Shanabrook, B.V.
    IEEE Transactions on Magnetics, 1998, 34 (4 pt 1): : 1054 - 1059
  • [5] Hybrid ferromagnet-semiconductor nonvolatile gate
    Johnson, M
    Bennett, BR
    Yang, MJ
    Miller, MM
    Shanabrook, BV
    IEEE TRANSACTIONS ON MAGNETICS, 1998, 34 (04) : 1054 - 1059
  • [6] Magnetic and magnetooptical properties of multilayer ferromagnet-semiconductor nanostructures
    V. E. Buravtsova
    E. A. Gan’shina
    V. S. Gushchin
    S. I. Kasatkin
    A. M. Murav’ev
    N. V. Plotnikova
    F. A. Pudonin
    Physics of the Solid State, 2004, 46 : 891 - 901
  • [7] Hybrid ferromagnet-semiconductor gates for nonvolatile memory
    Johnson, M
    Bennett, BR
    Yang, MJ
    Miller, MM
    Shanabrook, BV
    SEVENTH BIENNIAL IEEE INTERNATIONAL NONVOLATILE MEMORY TECHNOLOGY CONFERENCE, PROCEEDINGS, 1998, : 78 - 83
  • [8] Magnetic and magnetooptical properties of multilayer ferromagnet-semiconductor nanostructures
    Buravtsova, VE
    Gan'shina, EA
    Gushchin, VS
    Kasatkin, SI
    Murav'ev, AM
    Plotnikova, NV
    Pudonin, FA
    PHYSICS OF THE SOLID STATE, 2004, 46 (05) : 891 - 901
  • [9] Hybrid ferromagnet-semiconductor device for memory and logic
    Johnson, M
    IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) : 2758 - 2763
  • [10] Ferromagnet-semiconductor hybrid Hall effect device
    Johnson, M
    Bennett, BR
    55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997, 1997, : 158 - 159