Structural and optical properties of Bi12SiO20 thin films obtained by pulsed laser deposition

In this work, the synthesis of Bi12SiO20 thin films by pulsed laser deposition on silicon substrates is reported. The structure of the films has been investigated by Raman spectroscopy and X-ray diffraction. The thicknesses and complex refractive index have been determined by reflectivity measurements performed in situ during the growth process. The surface morphology was investigated by scanning electron microscopy. Highly oriented crystalline thin films were grown for substrate temperatures of 600 degrees C. The thermal annealing at 700 degrees C of the amorphous films deposited at substrate temperatures of 100-300 degrees C led to the formation of the eulytite crystalline phase (Bi-4(SiO4)(3)), whose Raman peaks are also reported.