Silicon trenching using dry etch process for back side FIB and probing

被引：0
|
作者：
Korchnoi, V
Fenigstein, A
Barger, A
机构：
来源：
ISTFA 2000: PROCEEDINGS OF THE 26TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2000年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：559 / 565
页数：7
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