Structural properties of semiconductor nanostructures from X-ray scattering

被引：0

作者：

Stangl, J ^{[1
]}

Schülli, T ^{[1
]}

Hesse, A ^{[1
]}

Holy, V ^{[1
]}

Bauer, G ^{[1
]}

Stoffel, M ^{[1
]}

Schmidt, OG ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, A-4040 Linz, Austria

来源：

ADVANCES IN SOLID STATE PHYSICS 44 | 2004年 / 44卷

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The optical and electrical properties of self-assembled semiconductor nanostructures are strongly affected by their chemical composition and strain state. These depend sensitively on the growth conditions. X-ray diffraction techniques are used in order to investigate series of SiGe/Si(001) island samples grown by molecular beam epitaxy at various temperatures. The chemical composition distribution and the in-plane strain of uncapped islands are obtained from x-ray diffraction reciprocal space maps and from iso-strain scattering combined with anomalous scattering at the Ge K-edge. From reciprocal space maps around asymmetric Bragg reflections, also the properties of capped islands are obtained, giving insight into the structural changes during capping of SiGe islands with Si.

引用

页码：227 / 237

页数：11

共 50 条

[1] Structural investigation of semiconductor nanostructures by X-ray techniques
Stangl, J
Hesse, A
Roch, T
Holy, V
Bauer, G
Schuelli, T
Metzger, TH
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 200 : 11 - 23
[2] Anomalous X-ray Scattering Methods for Structure Investigations of Semiconductor Nanostructures
Holy, Vaclav
Stangl, Julian
Bauer, Guenther
Schulli, Tobias
Metzger, Hartmut
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2005, 61 : C104 - C104
[3] X-ray characterization of semiconductor nanostructures
Holy, Vaclav
Buljan, Maja
Lechner, Rainer T.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (06)
[4] X-ray scattering on nanostructures: From ensemble average to single object properties
Mocuta, Cristian
Metzger, Hartmut T.
Mundboth, Kiran
Krause, Baerbel
Stangl, Julian
Bauer, Guenther
Deneke, Christoph
Schmidt, Oliver G.
Diaz, Ana
Malachias, Angelo
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2008, 64 : C9 - C9
[5] Structural Properties of Semiconductor Nanostructures Determined via X-ray Anomalous Diffraction (DAFS) and Absorption (EXAFS)
Proietti, Maria Grazia
Coraux, Johann
Renevier, Hubert
Favre-Nicolin, Vincent
Monat, Cristele
Gendry, Michel
Daudin, Bruno
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2005, 61 : C18 - C18
[6] X-ray scattering for semiconductor characterisation
Tanner, BK
SEMICONDUCTOR CHARACTERIZATION: PRESENT STATUS AND FUTURE NEEDS, 1996, : 263 - 272
[7] Advances in the structural characterisation of semiconductor crystals by X-ray scattering methods
Fewster, PF
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2004, 48-9 : 245 - 273
[8] X-ray diffuse scattering multilayer nanostructures
Andreev, AV
Ponomarev, YV
Platonov, YY
Salashchenko, NN
NONLINEAR OPTICS OF LOW-DIMENSIONAL STRUCTURES AND NEW MATERIALS - ICONO '95, 1996, 2801 : 75 - 87
[9] Investigation of Nanostructures with X-ray Scattering Techniques
Kriegner, Dominik
Dopita, Milan
CRYSTALS, 2019, 9 (10):
[10] Time resolved X-ray studies in semiconductor nanostructures
Jurgilaitis, A.
Harb, M.
Enquist, H.
Nuske, R.
Persson, A.
Larsson, J.
2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,

← 1 2 3 4 5 →