Molecular Dynamics Simulation of Dislocation Behavior in TiAl Intermetallic Compound

TiAl intermetallic compound has received much attention as a lightweight heat resistant material. Because mechanical property is affected by dislocation behavior, it is important to understand dislocation behavior in microscopic viewpoint. In this study, we simulated dislocation behavior in single phase gamma-TiAl and alpha(2)-Ti3Al using molecular dynamics method. From the results, we confirmed that perfect dislocation was divided into partial dislocations and stacking faults. We also investigated temperature dependence of dislocation behavior. We found that the dislocations at 1000 K moved less than those at 300 K.