A comparison of ionizing radiation damage in CMOS devices from 60Co gamma rays, electrons and protons

Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using Co-60 gamma rays, 1 MeV electrons and 1-9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts (Delta V-th) generated by Co-60 gamma rays are equal to that of I MeV electron and 1-7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts (Delta V-th) generated by Co-60 gamma rays and I MeV electrons irradiation are not large, and the radiation damage for protons below 9 MeV is always less than that of Co-60 gamma rays. The lower energy the proton has, the less serious the radiation damage becomes.