Metastable self-trapping of positrons in MgO

被引:10
|
作者
Monge, MA [1 ]
Pareja, R [1 ]
Gonzalez, R [1 ]
Chen, Y [1 ]
机构
[1] US DOE, DIV SCI MAT, OFF BASIC ENERGY SCI, WASHINGTON, DC 20585 USA
关键词
D O I
10.1103/PhysRevB.55.243
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low-temperature positron annihilation measurements have been performed on MgO single crystals containing either cation or anion vacancies. The temperature dependence of the S parameter is explained in terms of metastable self-trapped positrons which thermally hop through the crystal lattice. The experimental results are analyzed using a three-state trapping model assuming transitions from both delocalized and self-trapped states to deep trapped states at vacancies. The energy level of the self-trapped state was determined to be (62 +/- 5) meV above the delocalized state. The activation enthalpy for the hopping process of self-trapped positrons appears to depend on the kind of defect present in the crystals.
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页码:243 / 249
页数:7
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