Structural and optical properties of pulsed laser deposited ZnO/TiO2 and TiO2/ZnO thin films

被引:16
|
作者
Jain, Praveen K. [1 ,2 ]
Salim, Mohammad [2 ]
Kaur, Davinder [3 ]
机构
[1] Swami Keshvanand Inst Technol Management & Gramot, Dept Elect & Commun Engn, Jaipur, Rajasthan, India
[2] Malaviya Natl Inst Technol, Dept Elect & Commun Engn, Jaipur, Rajasthan, India
[3] Indian Inst Technol Roorkee, Dept Phys, Roorkee, Uttar Pradesh, India
来源
OPTIK | 2015年 / 126卷 / 21期
关键词
ZnO; TiO2; Optical properties; Photoluminescence; PLD; PHOTOCATALYTIC PROPERTIES; STRONG ULTRAVIOLET; ZNO; PHOTOLUMINESCENCE; EMISSION; STRAIN;
D O I
10.1016/j.ijleo.2015.07.127
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
ZnO/TiO2 and TiO2/ZnO thin films have been deposited on single crystal Si (1 0 0) substrate using pulsed laser deposition (PLO) technique in order to improve structural and optical properties of ZnO and TiO2 thin films. It was observed that the deposition of TiO2 film prior to ZnO, exhibited higher crystallinity along (0 0 2) diffraction peak, small compressive strain and stress and thereby rendering better optical properties as compared to ZnO films deposited directly on Si substrates. On the other hand, TiO2 thin film deposited on Si substrate exhibited pure anatase phase while the use of ZnO buffer was found to improve the crystallinity of TiO2 thin film. The photoluminescence spectra showed that TiO2 and ZnO buffer layers enhanced ultraviolet emissions of the ZnO and TiO2 thin films to a larger extent, respectively. (C) 2015 Elsevier GmbH. All rights reserved.
引用
收藏
页码:3260 / 3262
页数:3
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