A 2.6-GHz FULLY INTEGRATED CMOS POWER AMPLIFIER USING POWER-COMBINING TRANSFORMER

被引：4

作者：

Chiou, Hwann-Kaeo ^{[1
]}

Liao, Hsien-Yuan ^{[1
]}

Chen, Chien-Chung ^{[1
]}

Wang, Shih-Ming ^{[2
]}

Chen, Cheng-Chung ^{[2
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taoyuan, Taiwan

[2] Ind Technol Res Inst, Informat & Commun Res Labs, Hsinchu, Taiwan

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2010年 / 52卷 / 02期

关键词：

power amplifier; power combining; transformer; fully integrated; CMOS; DISTRIBUTED ACTIVE-TRANSFORMER;

D O I：

10.1002/mop.24910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2.6-GHz power amplifier was implemented with a 0.18 mu m RF CMOS process. The watching networks were fully integrated without any external components. To increase the output power, the power combining technique was adopted and realized by, a 2:1 on-chip transformer, which was designed to provide an optimum load for the power cell. The measured efficiency of this power combining transformer is about 7.5% at 2.6 GHz. The proposed power amplifier exhibits maximum output power of 26.7 dBm with power-added efficiency of 18.1%. The power gain is 13.6 dB under 3.3 V supply voltage. Moreover, this letter shows good agreement between simulated and measured results. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 299-302, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24910

引用

页码：299 / 302

页数：4

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