Technology progress on quantum dot light-emitting diodes for next-generation displays

被引:44
|
作者
Bang, Sang Yun [1 ]
Suh, Yo-Han [1 ]
Fan, Xiang-Bing [1 ]
Shin, Dong-Wook [1 ]
Lee, Sanghyo [1 ]
Choi, Hyung Woo [1 ]
Lee, Tae Hoon [1 ]
Yang, Jiajie [1 ]
Zhan, Shijie [1 ]
Harden-Chaters, William [1 ]
Samarakoon, Chatura [1 ]
Occhipinti, Luigi G. [1 ]
Han, Soo Deok [1 ]
Jung, Sung-Min [1 ]
Kim, Jong Min [1 ]
机构
[1] Univ Cambridge, Dept Engn, Elect Engn Div, 9 JJ Thomson Ave, Cambridge CB3 0FA, England
基金
英国工程与自然科学研究理事会;
关键词
Organic light emitting diodes (OLED) - Display devices - Semiconductor quantum dots - Chelation - Heavy metals;
D O I
10.1039/d0nh00556h
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Quantum dot light-emitting diodes (QD-LEDs) are widely recognised as great alternatives to organic light-emitting diodes (OLEDs) due to their enhanced performances. This focus article surveys the current progress on the state-of-the-art QD-LED technology including material synthesis, device optimization and innovative fabrication processes. A discussion on the material synthesis of core nanocrystals, shell layers and surface-binding ligands is presented for high photoluminescence quantum yield (PLQY) quantum dots (QDs) using heavy-metal free materials. The operational principles of several types of QD-LED device architectures are also covered, and the recent evolution of device engineering technologies is investigated. By exploring the fabrication process for pixel-patterning of QD-LEDs on an active-matrix backplane for full-colour display applications, we anticipate further improvement in device performance for the commercialisation of next-generation displays.
引用
收藏
页码:68 / 77
页数:10
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