Phonon heat transport in silicon nanowires

被引：11

作者：

Lü, X ^{[1
]}

Chu, JH ^{[1
]}

机构：

[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

来源：

EUROPEAN PHYSICAL JOURNAL B | 2002年 / 26卷 / 03期

关键词：

D O I：

10.1140/epjb.e20020102

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thermal conductivity of silicon and porous silicon nanowires based on the equation of phonon radiative transport is theoretically evaluated. The thermal conductivities of silicon nanowires with square cross-sections are found to match molecular dynamics simulation results reasonably well. It is shown that the results of meso-porous silicon nanowires are about two orders of magnitude lower than that of silicon nanowires in a wide range of temperature (50 K similar to 300 K).

引用

页码：375 / 378

页数：4

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