Silicon micro gyroscope with 10°/h stability in wide temperature range

In this paper we present the recent improvement of a silicon micro gyroscope with 10 degrees/h stability in the temperature range from -40 square to 60 square. The gyroscope sensing element is fabricated in an 80 mu m-thick SOI process and sealed in a wafer level vacuum package. The gyroscope die and ASIC die are stacked in the ceramic package with low stresses package technology. Under room temperature, the gyroscope has achieved non-linearity 26.9ppm in full-range of +/-400 degrees/s, 1.2 degrees/h bias stability (1 sigma), and 0.03 degrees/root h angle random walk(ARW) and 0.2 degrees/h instability. The bias stability is 10.2 degrees/h(1 sigma) with 5 temperature cycles, the temperature range is from -40 square to 60 square.