GaN layers grown by HVPE on p-type 6H-SiC substrates

被引：0

作者：

Nikolaev, AE ^{[1
]}

Melnik, YV ^{[1
]}

Blashenkov, MN ^{[1
]}

Kuznetsov, NI ^{[1
]}

Nikitina, IP ^{[1
]}

Zubrilov, AS ^{[1
]}

Tsvetkov, DV ^{[1
]}

Nikolaev, VI ^{[1
]}

Dmitriev, VA ^{[1
]}

Soloviev, VA ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST, ST PETERSBURG, RUSSIA

来源：

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 1996年 / 1卷 / 1-46期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gallium nitride films were successfully grown by HVPE technique on p-type 6H-SiC substrate. The layers exhibit high crystal quality as was determined by X-ray diffraction. Photoluminescence (PL) of these films was measured. The PL spectra were dominated by band edge emission. Concentration N-d-N-a in undoped epitaxial layers ranged from 2x10(17) to 1x10(19) cm(-3). Mesa-structures formed by reactive ion etching showed good rectifying current-voltage characteristics for GaN/SiC pn heterojunctions.

引用

页码：U346 / U352

页数：7

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