Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes

被引：1

作者：

Vang, H. ^{[1
,2
]}

Scharnhoz, S. ^{[1
]}

Raynaud, C. ^{[2
]}

Lazar, M. ^{[2
]}

Paques, G. ^{[1
]}

Planson, D. ^{[2
]}

机构：

[1] French German Res Inst St Louis ISL, BP 70034, F-68301 St Louis, France

[2] AMPERE INSA Lyon, F-69621 Villeurbanne, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

RIE; mesa; PiN diode; breakdown voltage;

D O I：

10.4028/www.scientific.net/MSF.600-603.1011

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper presents a comparison of the reverse characteristics of mesa terminated PiN diodes fabricated on n- and p-type 4H-SiC substrates. For n-type the attained breakdown voltages are higher and for p-type lower than expected. This is likely to be explained by the presence of negative charges at the interface between passivation oxide and SiC. Supported by XPS data we come to the conclusion that the RIE process creates surface charges which have an impact on the breakdown voltage of the fabricated diodes.

引用

页码：1011 / +

页数：2

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