Enhanced dielectric properties of nitrogen doped epitaxial Gd2O3 thin films on Si

被引：1
|
作者：
Chaudhuri, Ayan Roy [1 ]
Fissel, A. [2 ]
Osten, H. Joerg [1 ]
机构：
[1] Leibniz Univ Hannover, Inst Elect Mat & Devices, Schneiderberg 32, D-30167 Hannover, Germany
[2] Leibniz Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 9-10 | 2014年 / 11卷 / 9-10期
关键词：
high-kappa dielectrics; lanthanide oxides; defect engineering; molecular beam epitaxy; CONSTANT GATE OXIDES; RARE-EARTH-OXIDES; ELECTRICAL-PROPERTIES; LEAKAGE CURRENT; STABILITY; SILICON; STATES; HFO2;
D O I：
10.1002/pssc.201300596
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The impact of nitrogen doping on the growth electronic band structure and electrical properties of epitaxial Gd2O3 thin films on Si (111) has been investigated. Epitaxial layers of Gd2O3: N were grown on p-type Si (111) substrates by solid source molecular beam epitaxy technique using molecular N2O as the nitridation agent. Substitutional nitrogen incorporation into the dielectric layer was confirmed by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy measurements. Significant reduction of the leakage current density and disappearance of capacitance-voltage hysteresis in the Gd2O3: N layers indicate that nitrogen doping in Gd2O3 successfully eliminates the adverse effects of the oxygen vacancy induced defects in the oxide layer. (C) 2014 WILEY- VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1412 / 1416
页数：5
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