Resistive switching behavior of organic-metallic halide perovskites CH3NH3Pb1-xBixBr3

Organic-inorganic hybrid perovskites, which attract tremendous attention due to their incredible rise in power conversion efficiencies of new-generation solar cells, have proved to be promising semiconductor materials for photoelectric devices. However, the research of this kind of perovskites as electric memory materials is rarely reported. We herein report a series of new perovskites (CH3NH3MBr3, where "M" refers to Pb2+ or the mixed Pb2+/Bi3+) with remarkable resistive switching effect for using in resistive random access memory (RRAM). Such kind of perovskites was prepared by partially substitution of Pb2+ with Bi3+ in a more popular compound CH3NH3PbBr3. Consequently, RRAM devices based on the CH3NH3Pb1-xBixBr3 demonstrate an amazing high resistance switching ratio of about 10(5) and very low gate bias voltages of about +/- 1 V. Such appealing characteristics are even higher than those of frequently-used transition metal oxides perovskites like BaTiO3 and SrZrO3, etc. The outstanding performance of CH3NH3Pb1-xBixBr3 will inspire the intensive research of such kind of feasibly obtained perovskites as electric storage materials.