Controlled Synthesis of Composition Tunable Formamidinium Cesium Double Cation Lead Halide Perovskite Nanowires and Nanosheets with Improved Stability

被引:86
|
作者
Wang, Chuying [1 ]
Zhang, Yukang [1 ]
Wang, Aifei [1 ]
Wang, Qian [1 ]
Tang, Haiyan [1 ]
Shen, Wei [1 ]
Li, Zhe [1 ]
Deng, Zhengtao [1 ]
机构
[1] Nanjing Univ, Collaborat Innovat Ctr Chem Life Sci, Coll Engn & Appl Sci, Dept Biomed Engn,Nanjing Natl Lab Microstruct, Nanjing 210093, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
SOLUTION-PHASE SYNTHESIS; OPTICAL-PROPERTIES; COLLOIDAL SYNTHESIS; NANOCRYSTALS; LENGTHS; MICROMETER; MOBILITIES; GROWTH; BR;
D O I
10.1021/acs.chemmater.6b04848
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Lead halide perovskites with well-defined morphology have attracted attention for their unique properties as a promising new class of semiconductor materials in photovoltaics and optoelectronics. However, controlling morphologies and compositions of perovskite nanostructures with improved stability, especially for double cation lead halide perovskite, still remains a challenge. Here, we demonstrate a colloidal synthetic approach for direct synthesis of stable single crystal formamidinium (FA) cesium double cation lead halide FA(0.33)Cs(0.67)PbBr(3-x)I(x)(0 <= x <= 3) perovskite nanostructures with controllable morphology over a wide range of halide compositions, without using a previous anion-exchange process. The presence of FA alloyed in the A site for the pure cesium lead halide perovskite structure can stabilize the nanocrystals while delivering a better balance between structure and composition. On the basis of the FA(0.33)Cs(0.67)PbBr(3-x)I(x) alloy perovskite system, we achieved nanowires and nanosheets with high yield of various halide compositions by tuning the ligand participating in the reaction. These new perovskite nanostructures with well-defined morphology and compositions demonstrated improved stability and fluorescent and optoelectronic properties, which may allow them to find application as replacements for conventional semiconductor nanostructures in nanoscale devices.
引用
收藏
页码:2157 / 2166
页数:10
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