Novel ESD protection structure with embedded SCR LDMOS for smart power technology

被引：34

作者：

Lee, JH ^{[1
]}

Shih, JR ^{[1
]}

Tang, CS ^{[1
]}

Liu, KC ^{[1
]}

Wu, YH ^{[1
]}

Shiue, RY ^{[1
]}

Ong, TC ^{[1
]}

Peng, YK ^{[1
]}

Yue, JT ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, Hsinchu, Taiwan

来源：

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年

关键词：

Current distribution; Current measurement; Electrostatic discharge; Performance evaluation; Power transistors; Protection; Pulse measurements; Stress; Thyristors; Voltage;

D O I：

10.1109/RELPHY.2002.996629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new robust ESD protection structure has been proposed for smart power technology. By inserting a P+ diffusion into the drain region of 40V-LDMOS power transistor, the embedded SCR (ESCR-LDMOS) device can be built and without changing any DC I-V characteristics of a 40V-LDMOS power transistor. It is also found that the method with P+ strap inserted into drain region (N+ in NW) can improve the ESD failure threshold from 1kV to 6kV for HBM and from 100V to 350V for MM.

引用

页码：156 / 161

页数：6

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