Gate-controlled resonant interband tunneling in silicon

被引：14
|
作者：
Sedlmaier, S
Bhuwalka, KK
Ludsteck, A
Schmidt, M
Schulze, J
Hansch, W
Eisele, I
机构：
[1] Univ Bundeswehr Muenchen, Inst Phys, D-85577 Neubiberg, Germany
[2] Tech Univ Muenchen, Inst Tech Elect, D-80290 Munich, Germany
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 10期
关键词：
D O I：
10.1063/1.1783023
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present gate-controlled resonant interband tunneling on silicon <111>. The investigated structure principally consists of a vertical, gated p-i-n diode grown by molecular beam epitaxy. We evaluated the surface tunnel current from a gate-induced two-dimensional electron channel into the quantized hole states of a degenerately doped deltap(+) layer. This current reveals a negative differential resistance due to resonant interband tunneling in the forward biased p-i-n diode at 200 K. Even at room temperature the influence of this tunnel mechanism is observed. The experimental results are in good agreement with simulated band diagrams and their dependence on the applied voltages. (C) 2004 American Institute of Physics.
引用
收藏
页码：1707 / 1709
页数：3
相关论文
共 50 条
  • [1] Surface tunnel transistor: Gate-controlled lateral interband tunneling device
    Uemura, T
    Baba, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (03): : 1668 - 1675
  • [2] Gate-controlled quantum collimation in nanocolumn resonant tunneling transistors
    Wensorra, J.
    Lepsa, M. I.
    Trellenkamp, S.
    Moers, J.
    Indlekofer, K. M.
    Lueth, H.
    NANOTECHNOLOGY, 2009, 20 (46)
  • [3] Heterojunction Tunneling Transistors Using Gate-Controlled Tunneling Across Silicon-Germanium/Silicon Epitaxial Thin Films
    Nayfeh, Osama M.
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (07) : 844 - 846
  • [4] Gate-Controlled Donor Activation in Silicon Nanowires
    Yan, Binghai
    Frauenheim, Thomas
    Gali, Adam
    NANO LETTERS, 2010, 10 (09) : 3791 - 3795
  • [5] Gate-Controlled Electron Injection in Tunneling Contact IGZO TFTs
    Liu, Xiwen
    Zhang, Xintong
    Wang, Longyan
    Zhang, Lining
    Chan, Mansun
    2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2017,
  • [6] SILICON GATE-CONTROLLED AC SWITCH AND ITS APPLICATIONS
    STORM, HF
    WATROUS, DL
    IEEE TRANSACTIONS ON MAGNETICS, 1965, MAG1 (01) : 36 - &
  • [7] RESONANT INTERBAND TUNNELING FET
    TEHRANI, S
    SHEN, J
    GORONKIN, H
    KRAMER, G
    TSUI, R
    ZHU, TX
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (12) : 557 - 559
  • [8] RESONANT INTERBAND TUNNELING IN HETEROSTRUCTURES
    DEDIOSLEYVA, M
    LOPEZGONDAR, J
    BRUNO, A
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1992, 169 (02): : 351 - 358
  • [9] Gate-controlled series compensator on gate-controlled power semiconductor devices
    Ivakin V.N.
    Magnitskii A.A.
    Russian Electrical Engineering, 2008, 79 (10) : 566 - 575
  • [10] Tunneling spectroscopy of resonant interband tunneling structures
    Alonzo, AC
    Collins, DA
    McGill, TC
    SOLID STATE COMMUNICATIONS, 1997, 101 (08) : 607 - 610
12345