Preparation, Structural and Morphological Properties of Nanostructure ZnO Films by Sol Gel Spin Coating

被引：0
|
作者：
Caglar, Mujdat [1 ]
Ruzgar, Serif [1 ]
机构：
[1] Anadolu Univ, TR-26470 Eskisehir, Turkey
来源：
2014 TENTH INTERNATIONAL VACUUM ELECTRON SOURCES CONFERENCE (IVESC) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In preset study, the sol-gel method was used to deposit ZnO films and silicon substrates were used as substrate. The effects of deposition temperature on the structural and morphological properties of ZnO films were investigated. X-ray diffraction (XRD) measurement showed that the ZnO films were crystallized in the hexagonal wurtzite phase and presented a preferential orientation along the c-axis. The current-voltage (I-V) characteristics of the diode were performed using a KEITHLEY 2400 sourcemeter. The pn heterojunction diode was fabricated and the diode parameters were determined from the analysis of the measured dark current-voltage curves. Rectifying behavior was observed from the I-V characteristics of these heterojunction diodes.
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页数：2
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