Surface properties of indium tin oxide treated by Cl2 inductively coupled plasma

被引：7
|
作者：
He, Kongduo [1 ]
Yang, Xilu [1 ]
Yan, Hang [1 ]
Gong, Junyi [1 ]
Zhong, Shaofeng [1 ]
Ou, Qiongrong [1 ,2 ]
Liang, Rongqing [1 ,2 ]
机构：
[1] Fudan Univ, Dept Light Sources & Illuminating Engn, Shanghai 200433, Peoples R China
[2] Minist Educ, Engn Res Ctr Adv Lighting Technol, Shanghai 200433, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2014年 / 316卷
关键词：
Indium tin oxide; Plasma; Work function; Double exponential functions; First-order kinetics model; LIGHT-EMITTING-DIODES; HIGH WORK FUNCTION; HOLE INJECTION; DEVICE PERFORMANCE; KELVIN PROBE; LAYER; OXIDATION;
D O I：
10.1016/j.apsusc.2014.08.016
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effects of Cl-2 inductively coupled plasma (ICP) treatment on the time dependence of work function( WF) and surface properties of indium tin oxide (ITO) were investigated. Kelvin probe (KP) measurements show that the WF after Cl-2 ICP treatment is close to 5.9 eV. The WF decrease curve of Cl-2 plasma treated ITO is fitted with double exponential functions with an adjusted R-square of 0.99. The mechanism under the decrease process is discussed by X-ray photoelectron spectroscopy (XPS). The ITO WF decrease after Cl-2 ICP treatment performs much better than that after O-2 ICP treatment and the chlorinated ITO keeps a WF increment of 0.3 eV compared with that without plasma treatment after 100 days. Other properties of chlorinated ITO surface such as morphology and transmittance change slightly. The results are significant for the understanding of degradation of Cl-2 plasma treated ITO and the fabrication of organic semiconductor devices. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：214 / 221
页数：8
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