An approach to enhance the energy efficiency of three-phase inverter

Comparison is made between the energy potency of 4H-SiC UMOSFET with local floating superjunction (LFS UMOSFET) and that of conventional P-shielded UMOSFET. For the convenience of analysis, the energy loss and junction temperature models of P-shielded UMOSFET and LFS UMOSFET are established respectively. The results show that the switching loss of LFS UMOSFET is reduced by 20.6%. In addition, compared with P-shielded UMOSFET, LFS UMOSFET can reduce power efficiency by 33.2% and junction temperature by 28.1% when applied to three-phase inverter. The Sentaurus TCAD was used to simulate its electrical characteristics, and the UMOSFET power circuit simulation was performed using the power circuit simulator PSIM.