A study of the intermediate layer in 3C-SiC/6H-SiC heterostructures

被引：3

作者：

Lebedev, A. A. ^{[1
,2
]}

Zamoryanskaya, M. V. ^{[1
]}

Davydov, S. Yu. ^{[1
,2
]}

Kirilenko, D. A. ^{[1
]}

Lebedev, S. P. ^{[1
,2
]}

Sorokin, L. M. ^{[1
]}

Shustov, D. B. ^{[1
]}

Shcheglov, M. P. ^{[1
]}

机构：

[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 396卷

关键词：

Spinodal decomposition; Sublimation; Heteroepitaxy; SiC; C-FACE; NUCLEATION; GROWTH;

D O I：

10.1016/j.jcrysgro.2014.03.030

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Transmission electron microscopy and the cathocloluminescence method have been used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is. as a rule, constituted by alternating 3C-SiC and 6H-SiC layers, with possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the spinodal decomposition model. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：100 / 103

页数：4

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