Energy dependence of electron mobility in metallic nanowires

被引：0
|
作者：
Grado-Caffaro, M. A. [1 ]
Grado-Caffaro, M. [1 ]
机构：
[1] SAPIENZA SL Sci Consultants, Madrid 28029, Spain
来源：
OPTIK | 2009年 / 120卷 / 12期
关键词：
Electron drift mobility; Metallic nanowire; Electron energy; Electrochemical potentials; Conductance; NANOCONSTRICTIONS; CONDUCTANCE;
D O I：
10.1016/j.ijleo.2008.02.007
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We study the electron drift mobility in a metallic nanowire (at low temperature) as a function of both electron energy and electrochemical potential from considerations relative to energy-dependent conductance and carrier spatial density. In fact, a mathematical expression for the electron mobility, when electronic energy equals Fermi energy (resonant states), valid for negative values of the electrochemical potential is derived. (C) 2008 Elsevier GmbH. All rights reserved.
引用
收藏
页码：623 / 624
页数：2
相关论文
共 50 条
  • [1] Diameter dependence of electron mobility in InGaAs nanowires
    Hou, Jared J.
    Wang, Fengyun
    Han, Ning
    Zhu, Haoshen
    Fok, KitWa
    Lam, WaiChak
    Yip, SenPo
    Hung, TakFu
    Lee, Joshua E. -Y.
    Ho, Johnny C.
    APPLIED PHYSICS LETTERS, 2013, 102 (09)
  • [2] Size dependence of twin formation energy of metallic nanowires
    Zhang, Yongfeng
    Zhou, Longguang
    Huang, Hanchen
    INTERNATIONAL JOURNAL OF SMART AND NANO MATERIALS, 2013, 4 (02) : 112 - 118
  • [3] Optical properties of metallic nanowires by valence electron energy loss spectroscopy
    Laffont, L.
    Lonjon, A.
    Dantras, E.
    Demont, P.
    Lacabanne, C.
    MATERIALS LETTERS, 2011, 65 (23-24) : 3411 - 3414
  • [4] Electron mobility in silicon nanowires
    Ramayya, Edwin B.
    Vasileska, Dragica
    Goodnick, Stephen M.
    Knezevic, Irena
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2007, 6 (01) : 113 - 117
  • [5] Cross-sectional dependence of electron mobility and lattice thermal conductivity in silicon nanowires
    E. B. Ramayya
    D. Vasileska
    S. M. Goodnick
    I. Knezevic
    Journal of Computational Electronics, 2008, 7 : 319 - 323
  • [6] Cross-sectional dependence of electron mobility and lattice thermal conductivity in silicon nanowires
    Ramayya, E. B.
    Vasileska, D.
    Goodnick, S. M.
    Knezevic, I.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2008, 7 (03) : 319 - 323
  • [7] Calculation of electron velocity in metallic nanowires
    Grado-Caffaro, M. A.
    Grado-Caffaro, M.
    OPTIK, 2008, 119 (08): : 400 - 402
  • [8] Comment on: "Optical properties of metallic nanowires by valence electron energy loss spectroscopy"
    Stoeger-Pollach, M.
    MATERIALS LETTERS, 2012, 72 : 168 - 169
  • [9] Radial dependence of the carrier mobility in semiconductor nanowires
    Das, KK
    Mizel, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (42) : 6675 - 6685
  • [10] Electron beam introduced metallic nanowires growth
    Chen, Zhichao
    Yang, Zhan
    Chen, Tao
    Sun, Lining
    Fukuda, Toshio
    Yang, Lijun
    Li Xiangpeng
    Chi, Guanxin
    2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2016, : 26 - 29
12345