Controlling the Size and Density of Silicon Nanostructures by Incorporation of Nitrogen

被引：2

作者：

Kiebach, Ragnar ^{[1
]}

Yu, Zhenrui ^{[1
]}

Aceves-Mijares, Mariano ^{[1
]}

Du, Jinhui ^{[2
]}

Bian, Dongcai ^{[2
]}

Lopez-Estopier, Rosa ^{[1
]}

Carrillo-Lopez, Jesus ^{[3
]}

Juarez-Diaz, Gabriel ^{[3
]}

Martinez Juarez, Javier ^{[4
]}

机构：

[1] INAOE, Dept Elect, Puebla 72000, Pue, Mexico

[2] Tianjin Polytech Univ, Coll Chem Engn, Tianjin 300160, Peoples R China

[3] BUAP, CIDS ICUAP, Puebla, Pue, Mexico

[4] SEES CINVESTAV, Mexico City, DF, Mexico

来源：

CHEMICAL VAPOR DEPOSITION | 2008年 / 14卷 / 11-12期

基金：

中国国家自然科学基金;

关键词：

Self assembly; Silicon nanocrystal; Silicon nanoisland; Silicon rich oxide;

D O I：

10.1002/cvde.200806711

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Si nanostructures are prepared by thermal annealing of silicon rich oxide (SRO) which is deposited using low pressure (LP) CVD. X-ray diffraction (XRD), Raman spectroscopy, infrared (IR) spectroscopy, and transmission electron microscopy (TEM) are used to characterize the structure of the Si nanocrystals and nanoislands. The density, crystallinity, and size of the Si nanoislands and Si nanocrystals can be controlled by the amount of nitrogen hosted in the SRO. The Si and SiO2 phase separation of the SRO during the annealing process is hindered by the incorporation of nitrogen.

引用

页码：353 / 357

页数：5

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