P-i-n structures based on high-ohmic gettered gallium arsenide for α particle detectors

被引：1
|
作者：
Gorelenok, A. T. [1 ]
Tomasov, A. A.
Shmidt, N. M.
Il'ichev, E. A.
Lantratov, V. M.
Zadiranov, Yu. M.
Brunkov, P. N.
Titkova, O. V.
Kalyuzhnyi, N. A.
Mintarov, S. A.
Mdivani, V. N.
Katsoev, V. V.
Katsoev, L. V.
Shmelev, S. S.
机构：
[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 196140, Russia
[2] Lukin Sci Res Inst Phys Problems, Moscow, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2006年 / 32卷 / 11期
关键词：
D O I：
10.1134/S1063785006110241
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that p-i-n detectors of alpha particles can be created using high-ohmic (n similar to 10(12) cm(-3)) gallium arsenide obtained through lanthanide gettering of a low-ohmic (n similar to 10(15) cm(-3)) initial material wafers.
引用
收藏
页码：987 / 989
页数：3
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