Controllable intrinsic DC spin/valley Hall conductivity in ferromagnetic silicene: Exploring a fully spin/valley polarized transport

被引:7
|
作者
Mohammadi, Yawar [1 ]
Nia, Borhan Arghavani [2 ]
机构
[1] Islamic Azad Univ, Kermanshah Branch, Young Researchers & Elite Club, Kermanshah, Iran
[2] Islamic Azad Univ, Kermanshah Branch, Dept Phys, Kermanshah, Iran
关键词
Ferromagnetic silicene; Tight-binding model; Spin/valley Hall conductivity; VALLEY POLARIZATION; GRAPHENE; MOS2;
D O I
10.1016/j.spmi.2015.10.006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study intrinsic DC spin and valley Hall conductivity in doped ferromagnetic silicene in the presence of an electric filed applied perpendicular to silicene sheet. By calculating its energy spectrum and wavefunction and by making use of Kubo formalism, we obtain a general relation for the transverse Hall conductivity which can be used to obtain spin- and valley-Hall conductivity. Our results, in the zero limit of the exchange field, reduces to the previous results. Furthermore we discuss electrically tunable spin and valley polarized transport in ferromagnetic silicene and obtain the necessary conditions for observing a fully spin or valley polarized transport. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:442 / 449
页数:8
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