Post-breakdown characterization in thin gate oxides

被引：1
|
作者：
Viganò, E
Ghetti, A
Ghidini, G
Spinelli, AS
机构：
[1] STMicroelect, Cent R&D, I-20041 Agrate Brianza, Italy
[2] Univ Insubria, I-22100 Como, Italy
[3] INFM, I-22100 Como, Italy
来源：
MICROELECTRONICS RELIABILITY | 2002年 / 42卷 / 9-11期
关键词：
D O I：
10.1016/S0026-2714(02)00176-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
hi this paper we investigate soft/hard breakdown statistics and conduction in thin gate oxide (tox=4nm) N-MOS devices as a function of the stress polarity, geometry and area. We show: (i) the presence of a new breakdown mechanism with intermediate characteristics with respect to traditional soft and hard breakdown; (ii) the strong dependence of the incidence of the different breakdown modes on stress polarity and device aspect ratio; (iii) the origin of the post soft-breakdown substrate current. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1491 / 1496
页数：6
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