Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots

被引：4
|
作者：
Neudert, K. [1 ]
Trojanek, F. [1 ]
Kuldova, K. [2 ]
Oswald, J. [2 ]
Hospodkova, A. [2 ]
Maly, P. [1 ]
机构：
[1] Charles Univ Prague, Fac Math & Phys, CR-12116 Prague 2, Czech Republic
[2] ASCR, Inst Phys, Prague 162536, Turkey
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4 | 2009年 / 6卷 / 04期
关键词：
CARRIER RELAXATION; ENERGY RELAXATION; EXCITED-STATES; CAPTURE;
D O I：
10.1002/pssc.200880597
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the results of time-resolved photoluminescence spectroscopy of a double layer quantum dot structure with large spacer distance emitting at 1.3 mu m at room temperature. In ultrafast zero-time photoluminescence spectrum, we identified the transitions in GaAs barrier, in wetting layer and in quantum dots. Identical initial rise times give evidence of simultaneous filling of the quantum dot states. The excitation power dependence of photoluminescence dynamics reveals that the carrier dynamics are controlled by radiative recombination and cascade relaxation in quantum dot states. The overall picture of photoluminescence dynamics is in accord with a low concentration of nonradiative recombination channels in the studied structure which demonstrates its application potential. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim
引用
收藏
页码：853 / +
页数：2
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