Characterization and optimization of InP-based RTD and HBT microwave device combinations

被引：0
|
作者：
Velling, P [1 ]
Keiper, D [1 ]
Brennemann, A [1 ]
Agethen, M [1 ]
Janssen, G [1 ]
Bertenburg, RM [1 ]
机构：
[1] Innovat Proc AG, IPAG, D-47057 Duisburg, Germany
来源：
6TH WORLD MULTICONFERENCE ON SYSTEMICS, CYBERNETICS AND INFORMATICS, VOL XVII, PROCEEDINGS: INDUSTRIAL SYSTEMS AND ENGINEERING III | 2002年
关键词：
RTD; HBT; RTBT; MOVPE; OMVPE; InP; InGaAs; carbon doping; XRD; HRXRD;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Carbon doped InP/(InGa)As:C Heterostructure Bipolar Transistors (HBT) are of interest for todays (OC-768) and tomorrows (OC-3072, 100Gbit Ethernet, UMTS) communication standards. For a reliable fabrication of these complex radio frequency (opto-)electronic circuits a quantitative InP process technology control is necessary starting at the level of device epi-layer stacks. In this report the quantitative characterization of InP/(InGa)As:C HBT is carried out by non-destructive X-ray analysis. Based on Xray measurements in 004- and 002-reflection a detailed analysis of complex device layer stacks is proposed. As a result, an automatic calculation of layer parameters, e.g. thickness and composition is possible, reducing the turnaround time for the statistical process control (SPC).
引用
收藏
页码：533 / 538
页数：6
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