A CMOS readout circuit for a low shunt resistance IR photo-detector

被引：0
|
作者：
Fatima, Saman [1 ,2 ]
Avignon-Meseldzija, Emilie [1 ]
Lelandais-Perrault, Caroline [1 ]
Ben Chouikha, Mohamed [2 ]
Benabes, Philippe [1 ]
机构：
[1] Paris Saclay Univ, CentraleSupelec, CNRS, Lab Genie Elect & Elect Paris, F-91192 Gif Sur Yvette, France
[2] Sorbonne Univ, CNRS, Lab Genie Elect & Elect Paris, F-75252 Paris, France
来源：
2020 27TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS) | 2020年
关键词：
Readout Integrated Circuit (ROIC); IR photo-detector; Low shunt resistance of Infrared (IR) photo-detector; DIRECT-INJECTION; AMPLIFIER; DESIGN;
D O I：
10.1109/icecs49266.2020.9294945
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Specific Infrared (IR) detection systems are a solution for non-invasive monitoring of polymer aging in electrical power plants. For such application, the target photo-detector has a low shunt impedance of 40 Omega and produces a large photo-current of 70 mu A. This paper proposes a readout circuit designed in XFAB 0.18 mu m technology. Based on a CMDI architecture, a bi-cascode current mirroring direct injection circuit is proposed. It offers a 98% charge injection efficiency. The structure performs the DC current cancellation and integrate the resulting current in a 20pF capacitance. The 20 mu s duration pulses are integrated with a linearity error of 0.01%
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页数：4
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