Imaging and local current transport measurements of AlInP quantum dots grown on GaP

被引：8
|
作者：
Reddy, CV [1 ]
Narayanamurti, V
Ryou, JH
Chowdhury, U
Dupuis, RD
机构：
[1] Harvard Univ, Gordon Mckay Lab Appl Sci, Cambridge, MA 02138 USA
[2] Univ Texas, Ctr Microelect Res, Austin, TX 78712 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 11期
关键词：
D O I：
10.1063/1.126056
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Individual AlInP self-assembled quantum dots grown on a (100) GaP substrate are imaged and probed using ballistic electron emission microscopy (BEEM). The excellent nanometer scale lateral resolution of BEEM is utilized to inject carriers directly into a single quantum dot, and thus, current transport through the dot investigated without any direct electrical contact. The BEEM spectra taken on and off the dot revealed a local conduction-band offset between GaP and AlInP with a barrier height of Delta E(c)similar to 0.13 +/- 0.01 eV. (C) 2000 American Institute of Physics. [S0003-6951(00)02911-9].
引用
收藏
页码：1437 / 1439
页数：3
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