A new NBTI lifetime model (Ig-model) and an investigation on oxide thickness effect on NBTI degradation and recovery

被引：5
|
作者：
Chen, Chia Lin [1 ]
Chen, M. J. [1 ]
Wang, C. J. [1 ]
Wu, Kenneth [1 ]
机构：
[1] Taiwan Semicond Mfg Co, Reliabil Assurance Div, QR 121,Pk Ave,3 HsinChu Sci Pk, Hsinchu 30077, Taiwan
来源：
2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL | 2006年
关键词：
D O I：
10.1109/RELPHY.2006.251352
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new 1g-model is proposed, to quickly and precisely predict NBTI lifetime for ultra thin oxide(< = 3.0nm). The oxide thickness effect on NBTI degradation, recovery, and life time. prediction model are systematically investigated. The mechanism of the NBTI degradation and recovery dependence on oxide thickness is explained as the two-side hydrogen reaction-diffusion mechanisms.
引用
收藏
页码：741 / +
页数：2
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