Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure

被引：9

作者：

Hotta, Koushi ^{[1
]}

Tomizuka, Yumiko ^{[1
]}

Itagaki, Kosuke ^{[1
]}

Makabe, Isao ^{[2
]}

Yoshida, Shigeki ^{[2
]}

Miyamoto, Yasuyuki ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, 2-12-1-S9-2 O Okayama, Tokyo 1528550, Japan

[2] Sumitomo Elect Ind Ltd, Transmiss Devices Lab, Sakae Ku, 1 Taya Cho, Yokohama, Kanagawa 2448588, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SC期

关键词：

ALGAN/GAN; RESISTANCE;

D O I：

10.7567/1347-4065/ab1063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The N-polar face of the GaN high electron mobility transistor (HEMT) is capable of forming a low-resistivity ohmic contact. However, few reports to date describe the process of fabricating N-polar GaN HEMTs. In the present study, we investigated the dependence of the contact electrode metal resistance on the annealing temperature. A circular transmission line model was used to measure the contact resistance. Low resistances of 10(-5) - 10(-6) Omega cm(2) in the as-deposited state were observed. Contact characteristics following the annealing treatment deteriorated at low temperatures and improved again at high temperatures. This tendency is possibly related to the thin oxide layer at the interface between Ti and GaN. Using Ti/Al/Ti/Au electrodes of 20/100/10/50 nm, we observed a contact resistivity of 2.9 x 10(-6) Omega cm(2) after annealing at 775 degrees C. (C) 2019 The Japan Society of Applied Physics

引用

页数：5

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